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Titanium Sapphire Laser Crystals

Nanjing Crylink Photonics Co.,Ltd
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Titanium Sapphire Laser Crystals

Place of Origin : China

Brand Name : CRYLINK

Certification : Iso9001

MOQ : 1 Pieces

Price : negotiation

Packaging Details : Carton

Delivery Time : 3-4 weeks

Payment Terms : TT

Supply Ability : 100 pieces /month

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Description

Ti:Sapphire (Titanium doped Sapphire, Al2O3:Ti3+) has a wide range of emission band from 660 to 1050 nm, which faciitates a variety of existing and potential applications, such as tunable continuous-wave lasers, mode-locked oscillators, chirp-pulse amplifiers, thin disk oscillators/amplifiers and lidars. Moreover, the absorption band of Ti:Sapphire is centered at 490 nm, ranging from 400 to 650 nm, which makes it suitable for pump sources of many different lasers, for example, argon ion, frequency doubled Nd:YAG (Nd:YLF), and copper vapor lasers. Because of 3.2 s fluorescence lifetime, Ti:Sapphire crystals can be effectively pumped by flash lamps in high-power laser systems.

In order to obtain good quality of Ti:Sapphire crystals, the Ti3+ doping concentration has to be kept fairly low (e.g. 0.15% or 0.25%). Therefore limited pump absorption usually enforces the use of a crystal length of several millimeters, which in combination with the small pump spot size (for high pump intensity) means that a rather high pump brightness is required. Fortunately, Sapphire has also an excellent thermal conductivity, alleviating thermal effects even for high laser powers.

Features

  • Large gain-bandwidth
  • Very large emission bandwidth
  • Excellent thermal conductivity
  • Short excited-state lifetime (3.2 us)
  • High saturation power
  • Relatively high laser cross-sections
  • High damage threshold
  • Strong Kerr effect
  • Wide possible pump wavelengths

Applications

  • Femtosecond pulse lasers
  • High repetition rate oscillators
  • Chirped-pulse laser amplifiers
  • Multi-pass amplifiers
  • Regenerative amplifiers
  • Wavelength tunable CW lasers
  • Pulsed X-ray generation
  • Thin disk oscillator
  • Petawatt laser systems

Parameters

Property

Value

Chemicalformula

Ti3+:Al2O3

Crystalstructure

hexagonal

Orientation

A-Axiswithin 5°E-vector parallel to C-Axis

Massdensity

3.98 g/cm3

Mohhardness

9

Young'smodulus

335 GPa

Tensilestrength

400 MPa

Meltingpoint

2040°C

Thermalconductivity

33 W/(mK)

Thermalexpansion coefficient

≈5×10-6K-1

Thermalshock resistance parameter

790 W/m

Refractiveindex at 633 nm

1.76

Temperaturedependence of refractive index

13×10-6K-1

Tidensity for 0.1% at. doping

4.56×1019cm-3

Specifications

Property

Value

Fluorescencelifetime

3.2 s

Emissionwavelength

660~1100nm

Centralemission

800nm

Concentrations

(0.05~0.35)wt%

EndConfiguration

Flat/Flator Brewster/Brewster ends

Emissioncross section at 790 nm (polarization parallel to the c axis)

41×10-20cm2


Product Tags:

laser material

      

titanium doped sapphire

      
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